Phase transitions in ytterbium under pressure

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5043

Title:	Phase transitions in ytterbium under pressure
Authors:	Ramesh, T.G. Shubha, V. Ramaseshan, S.
Issue Date:	Jun-1977
Publisher:	IOP Publishing Ltd.
Citation:	Journal of Physics F, 1977, Vol. 7, p981-990
Abstract:	The semimetal-semiconductor transition in ytterbium has been studied in the pressure range @-50 kbar and up to 600'C using the Seebeck coefficient as a tool. In the FCC phase. the thermoelectric power exhibits a marked increase with pressure and the semimetal-semiconductor transition is observed as a change in the slope. In the semiconducting phase the thermopower initially increases very rapidly with pressure followed by a steep decrease at higher pressures. The temperature coefficient of thermopower in the semiconducting phase is large and positive in contrast to the semimetallic phase. The FCC- HCP transformation at high temperatures is reported. A semimetal-semiconductor transition in the HCP phase has also been observed. The experimental results are discussed qualitatively on the basis of a simplified two-band model.
Description:	Restricted Access
URI:	http://hdl.handle.net/2289/5043
ISSN:	0305-4608
Alternative Location:	http://adsabs.harvard.edu/abs/1977JPhF....7..981R http://dx.doi.org/10.1088/0305-4608/7/6/014
Copyright:	1977 IOP Publishing Ltd
Appears in Collections:	Miscellaneous Publications

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