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DC Field | Value | Language |
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dc.contributor.author | Shubha, V. | - |
dc.contributor.author | Ramesh, T.G. | - |
dc.contributor.author | Ramaseshan, S. | - |
dc.date.accessioned | 2012-07-20T10:56:34Z | - |
dc.date.available | 2012-07-20T10:56:34Z | - |
dc.date.issued | 1978 | - |
dc.identifier.citation | Solid State Communications, 1978, Vol. 26, p173-175 | en |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | http://hdl.handle.net/2289/5057 | - |
dc.description | Restricted Access | en |
dc.description.abstract | The critical point for the isostructural black to metallic phase transition in SmS has been determined using thermoelectric power as a probe. The magnitude of the thermo-power anomaly accompanying this electronic phase transition continuously decreases with the increase of temperature. Further the pressure hysteresis between the forward and reverse transitions progressively decreases as the critical point is approached. The present study indicates that the critical point is close to 825°C. | en |
dc.language.iso | en | en |
dc.publisher | Elsevier B.V. | en |
dc.relation.uri | http://adsabs.harvard.edu/abs/1978SSCom..26..173S | en |
dc.relation.uri | http://dx.doi.org/10.1016/0038-1098(78)91064-5 | en |
dc.rights | 1978 Elsevier B.V. | en |
dc.title | Critical point for the S → M transition in SmS | en |
dc.type | Article | en |
Appears in Collections: | Miscellaneous Publications |
Files in This Item:
File | Description | Size | Format | |
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1978_Solid State Communications_V26_p173.pdf | Restricted Access | 175.02 kB | Adobe PDF | View/Open |
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